v ceo 400 v v cbo 400 v v ebo 5.0 v i c 225 ma total device dissipation t a = 25 o c junction and storage temperature description data sheet npn epitaxial planar transistor FMMT458 ratings maximum ratings collector - emitter voltage collector - base voltage emitter - base voltage collector current symbol value units p d 500 mw t j , t stg -55 to 150 o c mechanical dimensions electrical characteristics @ 25 o c characteristic symbol min max unit collector - emitter breakdown voltage (i c = 10ma) collector - base breakdown voltage (i c = 100 m a) emitter - base breakdown voltage (i e = 100 m a) collector cutoff current (v cb = 320v, i e = 0) emitter cutoff current (v eb = 4.0v, i c = 0) static forward current transfer ratio (i c = 1.0 ma, v ce = 10 v) (i c = 50 ma, v ce = 10 v) (i c = 100 ma, v ce = 10 v) collector - emitter saturation voltage (i c = 50 ma, i b = 6.0 ma) base - emitter saturation voltage (i c = 50 ma, i b = 5.0 ma) current - gain - bandwidth product (i c = 10 ma, v ce = 20 v, f = 100 mhz) output capacitance (v cb = 20 v, f = 1.0 mhz) switching characteristics (i c = 50 ma, v cc = 100 v) (i b1 = 5.0 ma, i b2 = 10 ma) v br(ceo) 400 --- v v br(cbo) 400 --- v v br(ebo) 5.0 --- v i cbo --- 0.1 m a i ebo --- 0.1 m a h fe 100 100 300 15 v ce(sat) --- 0.5 v v be(sat) --- 0.9 v f t 50 --- mhz c ob --- 5.0 pf t on 35 (typ) n s t off 2260 (typ) n s .110 .060 .037 .037 .115 .016 .043 .004 .016 1 2 3 1 2 3 2 3 1 sot-23
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